Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide

Gregory W. Tomlins, Jules L. Routbort, Thomas O Mason

Research output: Contribution to journalArticle

170 Citations (Scopus)

Abstract

Zinc self-diffusion was measured in single crystal zinc oxide using nonradioactive 70Zn as the tracer isotope and secondary ion mass spectrometry for data collection. Crystal mass was closely monitored to measure ZnO evaporation. Diffusion coefficients were isotropic with an activation energy of 372 kJ/mol. Zinc self-diffusion is most likely controlled by a vacancy mechanism. Electrical property measurements exhibit a plateau in conductivity at intermediate pO2 with an increase in reducing atmospheres. An analysis of the defect structure is presented that indicates that oxygen vacancies are probably the intrinsic ionic defects responsible for n-type conductivity in reducing atmospheres.

Original languageEnglish
Pages (from-to)117-123
Number of pages7
JournalJournal of Applied Physics
Volume87
Issue number1
Publication statusPublished - Jan 1 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide'. Together they form a unique fingerprint.

  • Cite this