ZnO nanowire and WS2 nanotube electronics

Husnu Emrah Unalan, Yang Yang, Yan Zhang, Pritesh Hiralal, Daniel Kuo, Sharvari Dalal, Tim Butler, Seung Nam Cha, Jae Eun Jang, Konstantina Chremmou, Georgios Lentaris, Di Wei, Rital Rosentsveig, Kenichi Suzuki, Hidetoshi Matsumoto, Mie Minagawa, Yasuhiko Hayashi, Manish Chhowalla, Akihiko Tanioka, William I. Milne & 2 others Reshef Tenne, Geham A J Amaratunga

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide WS2 nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm2 V·s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm2 /V·s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.

Original languageEnglish
Pages (from-to)2988-3000
Number of pages13
JournalIEEE Transactions on Electron Devices
Volume55
Issue number11
DOIs
Publication statusPublished - 2008

Fingerprint

Zinc Oxide
Zinc oxide
Nanotubes
Nanowires
Electronic equipment
Phototransistors
Transistors
Nanostructures
Tungsten
Energy conversion
Disulfides
Optoelectronic devices
Temperature
Electrons

Keywords

  • Nanotubes
  • Nanowires
  • Solar cells
  • Transistors
  • Tungsten disulfide
  • Zinc oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Unalan, H. E., Yang, Y., Zhang, Y., Hiralal, P., Kuo, D., Dalal, S., ... Amaratunga, G. A. J. (2008). ZnO nanowire and WS2 nanotube electronics. IEEE Transactions on Electron Devices, 55(11), 2988-3000. https://doi.org/10.1109/TED.2008.2005166

ZnO nanowire and WS2 nanotube electronics. / Unalan, Husnu Emrah; Yang, Yang; Zhang, Yan; Hiralal, Pritesh; Kuo, Daniel; Dalal, Sharvari; Butler, Tim; Cha, Seung Nam; Jang, Jae Eun; Chremmou, Konstantina; Lentaris, Georgios; Wei, Di; Rosentsveig, Rital; Suzuki, Kenichi; Matsumoto, Hidetoshi; Minagawa, Mie; Hayashi, Yasuhiko; Chhowalla, Manish; Tanioka, Akihiko; Milne, William I.; Tenne, Reshef; Amaratunga, Geham A J.

In: IEEE Transactions on Electron Devices, Vol. 55, No. 11, 2008, p. 2988-3000.

Research output: Contribution to journalArticle

Unalan, HE, Yang, Y, Zhang, Y, Hiralal, P, Kuo, D, Dalal, S, Butler, T, Cha, SN, Jang, JE, Chremmou, K, Lentaris, G, Wei, D, Rosentsveig, R, Suzuki, K, Matsumoto, H, Minagawa, M, Hayashi, Y, Chhowalla, M, Tanioka, A, Milne, WI, Tenne, R & Amaratunga, GAJ 2008, 'ZnO nanowire and WS2 nanotube electronics', IEEE Transactions on Electron Devices, vol. 55, no. 11, pp. 2988-3000. https://doi.org/10.1109/TED.2008.2005166
Unalan HE, Yang Y, Zhang Y, Hiralal P, Kuo D, Dalal S et al. ZnO nanowire and WS2 nanotube electronics. IEEE Transactions on Electron Devices. 2008;55(11):2988-3000. https://doi.org/10.1109/TED.2008.2005166
Unalan, Husnu Emrah ; Yang, Yang ; Zhang, Yan ; Hiralal, Pritesh ; Kuo, Daniel ; Dalal, Sharvari ; Butler, Tim ; Cha, Seung Nam ; Jang, Jae Eun ; Chremmou, Konstantina ; Lentaris, Georgios ; Wei, Di ; Rosentsveig, Rital ; Suzuki, Kenichi ; Matsumoto, Hidetoshi ; Minagawa, Mie ; Hayashi, Yasuhiko ; Chhowalla, Manish ; Tanioka, Akihiko ; Milne, William I. ; Tenne, Reshef ; Amaratunga, Geham A J. / ZnO nanowire and WS2 nanotube electronics. In: IEEE Transactions on Electron Devices. 2008 ; Vol. 55, No. 11. pp. 2988-3000.
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