ZnO nanowire field-effect transistors: Ozone-induced threshold voltage shift and multiple nanowire effects

Sanghyun Ju, Kangho Lee, David B. Janes, Jianye Li, Robert P. H. Chang, Myung Han Yoon, Antonio Facchetti, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

ZnO nanowire field-effect transistors (NW-FETs) employing single nanowires were fabricated, using a self-assembled superlattice (SAS) as the gate insulator. Both depletion-mode and enhancement-mode ZnO NW-FETs were fabricated and characterized. An electrostatic model is proposed to describe observed threshold voltage shift upon optimum ozone treatment. Temperature-dependent current-voltage characteristics of depletion-mode ZnO NW-FETs verify this model, indicating the existence of body current through ZnO nanowires with low activation energy. In addition, NW-FETs that use multiple ZnO nanowires and a SiO2 gate insulator were fabricated to achieve higher on-current without significant degradation in on-off current ratio, threshold voltage shift, and subthreshold slopes.

Original languageEnglish
Title of host publication2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Pages445-448
Number of pages4
Volume2
Publication statusPublished - 2006
Event2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States
Duration: Jun 17 2006Jun 20 2006

Other

Other2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
CountryUnited States
CityCincinnati, OH
Period6/17/066/20/06

Fingerprint

Ozone
Field effect transistors
Threshold voltage
Nanowires
Current voltage characteristics
Electrostatics
Activation energy
Degradation

Keywords

  • Body current
  • Multiple nanowires
  • Schottky barrier
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Ju, S., Lee, K., Janes, D. B., Li, J., Chang, R. P. H., Yoon, M. H., ... Marks, T. J. (2006). ZnO nanowire field-effect transistors: Ozone-induced threshold voltage shift and multiple nanowire effects. In 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 (Vol. 2, pp. 445-448). [1717133]

ZnO nanowire field-effect transistors : Ozone-induced threshold voltage shift and multiple nanowire effects. / Ju, Sanghyun; Lee, Kangho; Janes, David B.; Li, Jianye; Chang, Robert P. H.; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.

2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. Vol. 2 2006. p. 445-448 1717133.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ju, S, Lee, K, Janes, DB, Li, J, Chang, RPH, Yoon, MH, Facchetti, A & Marks, TJ 2006, ZnO nanowire field-effect transistors: Ozone-induced threshold voltage shift and multiple nanowire effects. in 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. vol. 2, 1717133, pp. 445-448, 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, Cincinnati, OH, United States, 6/17/06.
Ju S, Lee K, Janes DB, Li J, Chang RPH, Yoon MH et al. ZnO nanowire field-effect transistors: Ozone-induced threshold voltage shift and multiple nanowire effects. In 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. Vol. 2. 2006. p. 445-448. 1717133
Ju, Sanghyun ; Lee, Kangho ; Janes, David B. ; Li, Jianye ; Chang, Robert P. H. ; Yoon, Myung Han ; Facchetti, Antonio ; Marks, Tobin J. / ZnO nanowire field-effect transistors : Ozone-induced threshold voltage shift and multiple nanowire effects. 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006. Vol. 2 2006. pp. 445-448
@inproceedings{fb646f3addfb4599825b6ba7d325a075,
title = "ZnO nanowire field-effect transistors: Ozone-induced threshold voltage shift and multiple nanowire effects",
abstract = "ZnO nanowire field-effect transistors (NW-FETs) employing single nanowires were fabricated, using a self-assembled superlattice (SAS) as the gate insulator. Both depletion-mode and enhancement-mode ZnO NW-FETs were fabricated and characterized. An electrostatic model is proposed to describe observed threshold voltage shift upon optimum ozone treatment. Temperature-dependent current-voltage characteristics of depletion-mode ZnO NW-FETs verify this model, indicating the existence of body current through ZnO nanowires with low activation energy. In addition, NW-FETs that use multiple ZnO nanowires and a SiO2 gate insulator were fabricated to achieve higher on-current without significant degradation in on-off current ratio, threshold voltage shift, and subthreshold slopes.",
keywords = "Body current, Multiple nanowires, Schottky barrier, ZnO",
author = "Sanghyun Ju and Kangho Lee and Janes, {David B.} and Jianye Li and Chang, {Robert P. H.} and Yoon, {Myung Han} and Antonio Facchetti and Marks, {Tobin J}",
year = "2006",
language = "English",
isbn = "1424400783",
volume = "2",
pages = "445--448",
booktitle = "2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006",

}

TY - GEN

T1 - ZnO nanowire field-effect transistors

T2 - Ozone-induced threshold voltage shift and multiple nanowire effects

AU - Ju, Sanghyun

AU - Lee, Kangho

AU - Janes, David B.

AU - Li, Jianye

AU - Chang, Robert P. H.

AU - Yoon, Myung Han

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2006

Y1 - 2006

N2 - ZnO nanowire field-effect transistors (NW-FETs) employing single nanowires were fabricated, using a self-assembled superlattice (SAS) as the gate insulator. Both depletion-mode and enhancement-mode ZnO NW-FETs were fabricated and characterized. An electrostatic model is proposed to describe observed threshold voltage shift upon optimum ozone treatment. Temperature-dependent current-voltage characteristics of depletion-mode ZnO NW-FETs verify this model, indicating the existence of body current through ZnO nanowires with low activation energy. In addition, NW-FETs that use multiple ZnO nanowires and a SiO2 gate insulator were fabricated to achieve higher on-current without significant degradation in on-off current ratio, threshold voltage shift, and subthreshold slopes.

AB - ZnO nanowire field-effect transistors (NW-FETs) employing single nanowires were fabricated, using a self-assembled superlattice (SAS) as the gate insulator. Both depletion-mode and enhancement-mode ZnO NW-FETs were fabricated and characterized. An electrostatic model is proposed to describe observed threshold voltage shift upon optimum ozone treatment. Temperature-dependent current-voltage characteristics of depletion-mode ZnO NW-FETs verify this model, indicating the existence of body current through ZnO nanowires with low activation energy. In addition, NW-FETs that use multiple ZnO nanowires and a SiO2 gate insulator were fabricated to achieve higher on-current without significant degradation in on-off current ratio, threshold voltage shift, and subthreshold slopes.

KW - Body current

KW - Multiple nanowires

KW - Schottky barrier

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=42549172361&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42549172361&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:42549172361

SN - 1424400783

SN - 9781424400782

VL - 2

SP - 445

EP - 448

BT - 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006

ER -