Zn2SbN3

Growth and characterization of a metastable photoactive semiconductor

Elisabetta Arca, John D. Perkins, Stephan Lany, Allison Mis, Bor Rong Chen, Patricia Dippo, Jonathan L. Partridge, Wenhao Sun, Aaron Holder, Adele C. Tamboli, Michael F. Toney, Laura T. Schelhas, Gerbrand Ceder, William Tumas, Glenn Teeter, Andriy Zakutayev

Research output: Contribution to journalArticle

Abstract

Ternary nitride semiconductors with wurtzite-derived crystal structures are an emerging class of materials for optoelectronic applications compatible with GaN and related III-V compounds. In particular, II-IV-V2 materials such as ZnSnN2 and ZnGeN2 have been very actively studied for applications in photovoltaics and light emitting devices. However, many other possible wurtzite-derived ternary nitrides have not been reported, and hence their optical and electrical properties remain unknown. Here, we report on Zn2SbN3-the first Sb-based nitride and a photoactive semiconductor. Surprisingly, Zn2SbN3 contains Sb in the highest (5+) oxidation state, and in the unusual tetrahedral coordination. This new Zn2SbN3 material has a solar-matched 1.6-1.7 eV band gap and shows near-band-edge room-temperature photoluminescence, demonstrating its promise as an optoelectronic semiconductor. Finally, Zn2SbN3 can be synthesized at low temperature under a wide range of processing conditions, despite being metastable according to theoretical calculations. All these results, as well as the band position measurements, indicate that Zn2SbN3 is a promising emerging semiconductor for applications as an absorber in photovoltaic-and photoelectrochemical solar cells.

Original languageEnglish
Pages (from-to)1669-1674
Number of pages6
JournalMaterials Horizons
Volume6
Issue number8
DOIs
Publication statusPublished - Oct 1 2019

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Nitrides
Semiconductor materials
Optoelectronic devices
Position measurement
Solar cells
Photoluminescence
Electric properties
Energy gap
Optical properties
Crystal structure
Oxidation
Temperature
Processing

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Process Chemistry and Technology
  • Electrical and Electronic Engineering

Cite this

Arca, E., Perkins, J. D., Lany, S., Mis, A., Chen, B. R., Dippo, P., ... Zakutayev, A. (2019). Zn2SbN3: Growth and characterization of a metastable photoactive semiconductor. Materials Horizons, 6(8), 1669-1674. https://doi.org/10.1039/c9mh00369j

Zn2SbN3 : Growth and characterization of a metastable photoactive semiconductor. / Arca, Elisabetta; Perkins, John D.; Lany, Stephan; Mis, Allison; Chen, Bor Rong; Dippo, Patricia; Partridge, Jonathan L.; Sun, Wenhao; Holder, Aaron; Tamboli, Adele C.; Toney, Michael F.; Schelhas, Laura T.; Ceder, Gerbrand; Tumas, William; Teeter, Glenn; Zakutayev, Andriy.

In: Materials Horizons, Vol. 6, No. 8, 01.10.2019, p. 1669-1674.

Research output: Contribution to journalArticle

Arca, E, Perkins, JD, Lany, S, Mis, A, Chen, BR, Dippo, P, Partridge, JL, Sun, W, Holder, A, Tamboli, AC, Toney, MF, Schelhas, LT, Ceder, G, Tumas, W, Teeter, G & Zakutayev, A 2019, 'Zn2SbN3: Growth and characterization of a metastable photoactive semiconductor', Materials Horizons, vol. 6, no. 8, pp. 1669-1674. https://doi.org/10.1039/c9mh00369j
Arca E, Perkins JD, Lany S, Mis A, Chen BR, Dippo P et al. Zn2SbN3: Growth and characterization of a metastable photoactive semiconductor. Materials Horizons. 2019 Oct 1;6(8):1669-1674. https://doi.org/10.1039/c9mh00369j
Arca, Elisabetta ; Perkins, John D. ; Lany, Stephan ; Mis, Allison ; Chen, Bor Rong ; Dippo, Patricia ; Partridge, Jonathan L. ; Sun, Wenhao ; Holder, Aaron ; Tamboli, Adele C. ; Toney, Michael F. ; Schelhas, Laura T. ; Ceder, Gerbrand ; Tumas, William ; Teeter, Glenn ; Zakutayev, Andriy. / Zn2SbN3 : Growth and characterization of a metastable photoactive semiconductor. In: Materials Horizons. 2019 ; Vol. 6, No. 8. pp. 1669-1674.
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